Quick Answer
Calculate SiC MOSFET Gate-Charge-Based Turn-On Delay and Rise Time Estimator
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SiC MOSFET Gate-Charge-Based Turn-On Delay and Rise Time Estimator calculator computes Turn-On Delay and Rise Time in s using the defined engineering formula and the input values provided. Turn-On Delay and Rise Time is expressed in s. No universal acceptance threshold is defined by this calculator.
Worked Example
Verified calculation
Given:
- Gate Threshold Charge = 1.2E-8
- Miller Plateau Charge = 2.8E-8
- Reverse Recovery Charge = 1.5E-8
- Peak Gate Drive Current = 2.5
- Gate Resistor = 4.7
- Gate Drive Voltage = 15
- MOSFET Threshold Voltage = 4
Expected Result:
- Turn-On Delay and Rise Time = 1.9204545454545E-8
Engineering Interpretation:
Under the given input conditions, the calculated result is: Turn-On Delay and Rise Time = 1.9204545454545E-8 s.
The actual numerical result is computed by the Runtime engine using the persisted tool definition. The values shown here come from deterministically validated test cases.
Formula / Method
turn-on delay and rise time = (gate threshold charge / peak gate drive current) + (miller plateau charge / peak gate drive current) + (0.5 * reverse recovery charge * gate resistor / (gate drive voltage - mosfet threshold voltage))Formula family: formula_powerelectronics_sic_mosfet_gate_charge_based_turn_on_delay_and_rise_time_estimator
Variables
| Symbol | Label | Role | Description |
|---|---|---|---|
| Q_gth | Gate Threshold Charge | INPUT | Gate Threshold Charge |
| Q_gv | Miller Plateau Charge | INPUT | Miller Plateau Charge |
| Q_rr | Reverse Recovery Charge | INPUT | Reverse Recovery Charge |
| I_gate_peak | Peak Gate Drive Current | INPUT | Peak Gate Drive Current |
| R_g | Gate Resistor | INPUT | Gate Resistor |
| V_drive | Gate Drive Voltage | INPUT | Gate Drive Voltage |
| V_th | MOSFET Threshold Voltage | INPUT | MOSFET Threshold Voltage |
| result | Turn-On Delay and Rise Time | OUTPUT | Turn-On Delay and Rise Time |
Calculation Steps
- Enter the gate threshold charge in C.
- Enter the miller plateau charge in C.
- Enter the reverse recovery charge in C.
- Enter the peak gate drive current in A.
- Enter the gate resistor in ohm.
- Enter the gate drive voltage in V.
- Enter the mosfet threshold voltage in V.
- Step 1: Compute turn-on delay and rise time.
- Read the turn-on delay and rise time (s) from the results.
Engineering Summary
Calculate SiC MOSFET Gate-Charge-Based Turn-On Delay and Rise Time Estimator
Frequently Asked Questions
What does this calculator calculate?
The SiC MOSFET Gate-Charge-Based Turn-On Delay and Rise Time Estimator calculator estimates Turn-On Delay and Rise Time based on the input parameters you provide
Why is gate threshold charge important in this calculation?
gate threshold charge is directly proportional to turn-on delay and rise time. When you enter gate threshold charge in C, the calculator uses it in the engineering formula to compute the output
How should I interpret the result turn-on delay and rise time?
The calculator outputs turn-on delay and rise time in s. The result is computed directly from the input values using the defined engineering formula
What units should I use for the inputs?
Enter each value in the units shown next to the input field: Gate Threshold Charge (C), Miller Plateau Charge (C), Reverse Recovery Charge (C), Peak Gate Drive Current (A), Gate Resistor (ohm), Gate Drive Voltage (V), MOSFET Threshold Voltage (V). Make sure all inputs use the specified units for consistent results
What assumptions does this calculator use?
This calculator uses automatically validated engineering formulas. Results are approximate and should be validated against site-specific conditions, applicable codes, and professional engineering judgment
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